Invention Grant
US07989885B2 Semiconductor device having means for diverting short circuit current arranged in trench and method for producing same
有权
具有用于转移布置在沟槽中的短路电流的装置的半导体器件及其制造方法
- Patent Title: Semiconductor device having means for diverting short circuit current arranged in trench and method for producing same
- Patent Title (中): 具有用于转移布置在沟槽中的短路电流的装置的半导体器件及其制造方法
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Application No.: US12393210Application Date: 2009-02-26
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Publication No.: US07989885B2Publication Date: 2011-08-02
- Inventor: Franz Hirler , Frank Dieter Pfirsch
- Applicant: Franz Hirler , Frank Dieter Pfirsch
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, P.L.L.C.
- Main IPC: H01L29/732
- IPC: H01L29/732 ; H01L21/8249
Abstract:
A semiconductor device has a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type complementary to the first conductivity type arranged in or on the first semiconductor layer. The semiconductor device has a region of the first conductivity type arranged in the second semiconductor layer. A first electrode contacts the region of the first conductivity type and the second semiconductor layer. A trench extends into the first semiconductor layer, and a voltage dependent short circuit diverter structure has a highly-doped diverter region of the second conductivity type. This diverter region is arranged via an end of a channel region and coupled to a diode arranged in the trench.
Public/Granted literature
- US20100213505A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE Public/Granted day:2010-08-26
Information query
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