Invention Grant
US07989924B2 Switching element, programmable logic integrated circuit and memory element
有权
开关元件，可编程逻辑集成电路和存储元件
- Patent Title: Switching element, programmable logic integrated circuit and memory element
- Patent Title (中): 开关元件，可编程逻辑集成电路和存储元件
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Application No.: US11430844Application Date: 2006-05-10
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Publication No.: US07989924B2Publication Date: 2011-08-02
- Inventor: Toshitsugu Sakamoto , Noriyuki Iguchi , Hiroshi Sunamura
- Applicant: Toshitsugu Sakamoto , Noriyuki Iguchi , Hiroshi Sunamura
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2005-138213 20050511
- Main IPC: H01L29/12
- IPC: H01L29/12
Abstract:
A switching element with a switching voltage set higher than conventional, which includes an ion conduction layer including tantalum oxide, a first electrode provided in contact with the ion conduction layer, and a second electrode provided in contact with the ion conduction layer and capable of supplying the ion conduction layer with metal ions.
Public/Granted literature
- US20060273429A1 Switching element, programmable logic integrated circuit and memory element Public/Granted day:2006-12-07
Information query
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