Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12041793Application Date: 2008-03-04
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Publication No.: US07989947B2Publication Date: 2011-08-02
- Inventor: Katsumi Otani
- Applicant: Katsumi Otani
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Steptoe & Johnson LLP
- Priority: JP2007-054959 20070306; JP2007-147571 20070604
- Main IPC: H01L23/34
- IPC: H01L23/34
Abstract:
A semiconductor device includes a semiconductor element 1, a thermal conductor 91 located opposite a major surface of the semiconductor element 1, and a mold resin member 6 molding the semiconductor element 1 and at least a part of the thermal conductor 91, wherein at least a part of a top surface of the thermal conductor 91 has an exposed portion exposed from the mold resin member 6, the exposed portion of the thermal conductor 91 has an opening 11, and a periphery of the opening 11 forms a projecting portion 91b projecting toward an opposite side of the semiconductor element 1.
Public/Granted literature
- US20080217753A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2008-09-11
Information query
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