Invention Grant
- Patent Title: Electrostatic discharge withstand voltage evaluating device and electrostatic discharge withstand voltage evaluating method
- Patent Title (中): 静电放电耐压评估装置及静电放电耐压评估方法
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Application No.: US12311857Application Date: 2007-10-17
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Publication No.: US07990170B2Publication Date: 2011-08-02
- Inventor: Narakazu Shimomura , Toshio Mimoto , Koichi Kamiyama
- Applicant: Narakazu Shimomura , Toshio Mimoto , Koichi Kamiyama
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaihsa
- Current Assignee: Sharp Kabushiki Kaihsa
- Current Assignee Address: JP Osaka
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2006-286903 20061020
- International Application: PCT/JP2007/070259 WO 20071017
- International Announcement: WO2008/047837 WO 20080424
- Main IPC: G01R31/26
- IPC: G01R31/26

Abstract:
In one embodiment of the present invention, an electrostatic discharge withstand voltage evaluating device includes: an application device, including a first connecting section and a second connecting section, for supplying pulse electric charge, the first connecting section being connectable to one or whole terminal (s) of one of input terminals and output terminals of a source driver, and supplying electric charge to the source driver, the second connecting section being connectable to one or whole terminal(s) of the other one of the input terminals and the output terminals, and enabling said one or whole terminal(s) of the other one of the input terminals and the output terminals to be grounded; and a common connecting section being connectable to the plurality of output terminals of the source driver, and causing the plurality of output terminals to be electrically connected to each other, wherein the output terminals of the source driver are connected, via the common connecting section, to one of the first connecting section and the second connecting section. Therefore, the electrostatic discharge withstand voltage evaluating device can more successfully recreate how a failure occurs in a semiconductor device and can evaluate an electrostatic discharge breakdown withstand of the semiconductor device.
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