Invention Grant
- Patent Title: Power-up signal generating circuit and integrated circuit using the same
- Patent Title (中): 上电信号发生电路和集成电路使用相同
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Application No.: US12345846Application Date: 2008-12-30
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Publication No.: US07990189B2Publication Date: 2011-08-02
- Inventor: Yoon-Jae Shin
- Applicant: Yoon-Jae Shin
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2008-0108904 20081104
- Main IPC: H03L7/00
- IPC: H03L7/00

Abstract:
A power-up signal generating circuit includes a detecting unit configured to output a bias signal having a voltage level corresponding to an external power voltage in response to an internal voltage and a deep power down (DPD) signal; and a signal generating unit configured to generate a power-up signal having a logic level corresponding to the voltage level of the external power voltage in response to the DPD signal and the bias signal, wherein the internal voltage increases during an activation time of the power-up signal to reach a predetermined voltage level after a predetermined time, and maintains a ground voltage level during an inactivation period of the power-up signal.
Public/Granted literature
- US20100109723A1 POWER-UP SIGNAL GENERATING CIRCUIT AND INTEGRATED CIRCUIT USING THE SAME Public/Granted day:2010-05-06
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