Invention Grant
- Patent Title: RF power amplifier
- Patent Title (中): 射频功率放大器
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Application No.: US12575494Application Date: 2009-10-08
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Publication No.: US07990220B2Publication Date: 2011-08-02
- Inventor: Masao Kondo , Yoshikuni Matsunaga , Kenta Seki , Satoshi Sakurai
- Applicant: Masao Kondo , Yoshikuni Matsunaga , Kenta Seki , Satoshi Sakurai
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2008-290911 20081113
- Main IPC: H03F3/26
- IPC: H03F3/26

Abstract:
A reduction is achieved in the primary-side input impedance of a transformer (voltage transformer) as an output matching circuit without involving a reduction in Q-factor. An RF power amplifier includes transistors, and a transformer as the output matching circuit. The transformer has a primary coil and a secondary coil which are magnetically coupled to each other. To the input terminals of the transistors, respective input signals are supplied. The primary coil is coupled to each of the output terminals of the transistors. From the secondary coil, an output signal is generated. The primary coil includes a first coil and a second coil which are coupled in parallel between the respective output terminals of the transistors, and each magnetically coupled to the secondary coil. By the parallel coupling of the first and second coils of the primary coil, the input impedance of the primary coil is reduced.
Public/Granted literature
- US20100117737A1 RF POWER AMPLIFIER Public/Granted day:2010-05-13
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