Invention Grant
- Patent Title: Overvoltage protection control circuits and overvoltage protection control methods
- Patent Title (中): 过电压保护控制电路及过压保护控制方式
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Application No.: US11727975Application Date: 2007-03-29
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Publication No.: US07990671B2Publication Date: 2011-08-02
- Inventor: Dae-yong Kim
- Applicant: Dae-yong Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0029815 20060331
- Main IPC: H02H3/20
- IPC: H02H3/20
Abstract:
An overvoltage protection control circuit includes a voltage conversion circuit, a voltage comparison circuit, and a switching circuit. The voltage conversion circuit generates a first voltage and a second voltage based on a power supply voltage. The voltage comparison circuit generates a control signal based on a comparison between the first voltage and the second voltage. The switching circuit determines whether to apply the power supply voltage to a chip in response to the control signal. The overvoltage protection control circuit is formed inside the chip.
Public/Granted literature
- US20070230077A1 Overvoltage protection control circuits and overvoltage protection control methods Public/Granted day:2007-10-04
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