Invention Grant
US07990751B2 Drive method of nanogap switching element and storage apparatus equipped with nanogap switching element 有权
纳米开关元件的驱动方法和配备纳米角开关元件的存储装置

Drive method of nanogap switching element and storage apparatus equipped with nanogap switching element
Abstract:
A nanogap switching element is equipped with an inter-electrode gap portion including a gap of a nanometer order between a first electrode and a second electrode. A switching phenomenon is caused in the inter-electrode gap portion by applying a voltage between the first and second electrodes. The nanogap switching element is shifted from its low resistance state to its high resistance state by receiving a voltage pulse application of a first voltage value, and shifted from its high resistance state to its low resistance state by receiving a voltage pulse application of a second voltage value lower than the first voltage value. When the nanogap switching element is shifted from the high resistance state to the low resistance state, a voltage pulse of an intermediate voltage value between the first and second voltage values is applied thereto before the voltage pulse application of the second voltage value thereto.
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