Invention Grant
US07990751B2 Drive method of nanogap switching element and storage apparatus equipped with nanogap switching element
有权
纳米开关元件的驱动方法和配备纳米角开关元件的存储装置
- Patent Title: Drive method of nanogap switching element and storage apparatus equipped with nanogap switching element
- Patent Title (中): 纳米开关元件的驱动方法和配备纳米角开关元件的存储装置
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Application No.: US12338313Application Date: 2008-12-18
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Publication No.: US07990751B2Publication Date: 2011-08-02
- Inventor: Yuichiro Masuda , Shigeo Furuta , Tsuyoshi Takahashi , Tetsuo Shimizu , Yasuhisa Naitoh , Masayo Horikawa
- Applicant: Yuichiro Masuda , Shigeo Furuta , Tsuyoshi Takahashi , Tetsuo Shimizu , Yasuhisa Naitoh , Masayo Horikawa
- Applicant Address: JP Tsukuba-shi JP Tokyo JP Daito-shi
- Assignee: Funai Electric Advanced Applied Technology Research Institute Inc.,National Institute of Advanced Industrial Science and Technology,Funai Electric Co., Ltd.
- Current Assignee: Funai Electric Advanced Applied Technology Research Institute Inc.,National Institute of Advanced Industrial Science and Technology,Funai Electric Co., Ltd.
- Current Assignee Address: JP Tsukuba-shi JP Tokyo JP Daito-shi
- Agency: Crowell & Moring LLP
- Priority: JP2007-328393 20071220
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C7/00 ; G11C7/22

Abstract:
A nanogap switching element is equipped with an inter-electrode gap portion including a gap of a nanometer order between a first electrode and a second electrode. A switching phenomenon is caused in the inter-electrode gap portion by applying a voltage between the first and second electrodes. The nanogap switching element is shifted from its low resistance state to its high resistance state by receiving a voltage pulse application of a first voltage value, and shifted from its high resistance state to its low resistance state by receiving a voltage pulse application of a second voltage value lower than the first voltage value. When the nanogap switching element is shifted from the high resistance state to the low resistance state, a voltage pulse of an intermediate voltage value between the first and second voltage values is applied thereto before the voltage pulse application of the second voltage value thereto.
Public/Granted literature
- US20090161407A1 Drive Method of Nanogap Switching Element and Storage Apparatus Equipped with Nanogap Switching Element Public/Granted day:2009-06-25
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