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US07990767B2 Flash memory system having cross-coupling compensation during read operation 有权
闪存系统在读取操作期间具有交叉耦合补偿

Flash memory system having cross-coupling compensation during read operation
Abstract:
A method for reading an addressed cell of a memory system comprises applying at least two different voltage levels to a control gate of a memory cell in an array of memory cells, wherein the memory cell is adjacent to and in electrical field communication with the addressed memory cell. A threshold voltage of the addressed memory cell is measured at each of the at least two different applied voltage levels. At least two of the measured threshold voltages of the addressed memory cell are converted to one or more bit values stored in the addressed memory cell. The bit values are provided to a host of the memory system. An apparatus implementing the method is also disclosed.
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