Invention Grant
US07990776B2 Semiconductor memory device with optimum refresh cycle according to temperature variation
有权
半导体存储器件根据温度变化具有最佳的刷新周期
- Patent Title: Semiconductor memory device with optimum refresh cycle according to temperature variation
- Patent Title (中): 半导体存储器件根据温度变化具有最佳的刷新周期
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Application No.: US10882137Application Date: 2004-06-29
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Publication No.: US07990776B2Publication Date: 2011-08-02
- Inventor: Se-Jun Kim , Sang-Hoon Hong , Jae-bum Ko
- Applicant: Se-Jun Kim , Sang-Hoon Hong , Jae-bum Ko
- Applicant Address: KR Ichon-shi
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Ichon-shi
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: KR10-2003-0098505 20031229
- Main IPC: G11C7/06
- IPC: G11C7/06
Abstract:
A semiconductor memory device, which performs a refresh operation, includes: a temperature sensing unit for measuring temperature and for generating a temperature controlled voltage and a reference current based on the measured temperature; an analog-digital conversion unit for converting the temperature controlled voltage to an N-bit digital signal; a refresh control unit for generating a refresh signal in response to the N-bit digital signal, wherein, a period of the refresh signal is controlled based on the N-bit digital signal.
Public/Granted literature
- US20050141311A1 Semiconductor memory device with optimum refresh cycle according to temperature variation Public/Granted day:2005-06-30
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