Invention Grant
- Patent Title: Method of operating semiconductor devices
- Patent Title (中): 操作半导体器件的方法
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Application No.: US12585540Application Date: 2009-09-17
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Publication No.: US07990779B2Publication Date: 2011-08-02
- Inventor: Sang-moo Choi , Won-joo Kim , Tae-hee Lee
- Applicant: Sang-moo Choi , Won-joo Kim , Tae-hee Lee
- Applicant Address: KR Gyeongg-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeongg-do
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2008-0111216 20081110
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A method of operating a semiconductor device including a memory cell of a 1-T DRAM is provided in which a gate voltage level in a hold mode is adjusted to adjust a data sensing margin of the semiconductor device.
Public/Granted literature
- US20100118623A1 Method of operating semiconductor devices Public/Granted day:2010-05-13
Information query
