Invention Grant
US07990792B2 Hybrid sense amplifier and method, and memory device using same
有权
混合感测放大器和方法,以及使用其的存储器件
- Patent Title: Hybrid sense amplifier and method, and memory device using same
- Patent Title (中): 混合感测放大器和方法,以及使用其的存储器件
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Application No.: US12830129Application Date: 2010-07-02
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Publication No.: US07990792B2Publication Date: 2011-08-02
- Inventor: Keiichiro Abe , Yukata Ito
- Applicant: Keiichiro Abe , Yukata Ito
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G11C7/02
- IPC: G11C7/02

Abstract:
Sense circuits, devices and methods are disclosed, including a sense amplifier circuit that has first and second complementary data lines and a sensing circuit. One of the data lines can be coupled to a memory cell for data sensing and the other data line can be used as reference. The sensing circuit has first and second complementary output nodes and is coupled to the data lines. In a first mode, the sensing circuit can sense a difference between a voltage on the first digit line and a voltage on the second digit line to generate a first voltage differential between the first and second output nodes. In a second mode, the sensing circuit can sense a difference between a current flow in the first digit line and a current flow in the second digit line to generate a second voltage differential between the first and second output nodes. Other sense circuits, devices and methods are also provided.
Public/Granted literature
- US20100265782A1 HYBRID SENSE AMPLIFIER AND METHOD, AND MEMORY DEVICE USING SAME Public/Granted day:2010-10-21
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