Invention Grant
- Patent Title: Dynamic random access memory (DRAM) refresh
- Patent Title (中): 动态随机存取存储器（DRAM）刷新
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Application No.: US12388922Application Date: 2009-02-19
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Publication No.: US07990795B2Publication Date: 2011-08-02
- Inventor: Perry H. Pelley, III , George P. Hoekstra
- Applicant: Perry H. Pelley, III , George P. Hoekstra
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent James L. Clingan, Jr.; Joanna G. Chiu
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A method for refreshing a Dynamic Random Access Memory (DRAM) includes performing a refresh on at least a portion of the DRAM at a first refresh rate, and performing a refresh on a second portion of the DRAM at a second refresh rate. The second portion includes one or more rows of the DRAM which do not meet a data retention criteria at the first refresh rate, and the second refresh rate is greater than the first refresh rate.
Public/Granted literature
- US20100208537A1 DYNAMIC RANDOM ACCESS MEMORY (DRAM) REFRESH Public/Granted day:2010-08-19
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