Invention Grant
- Patent Title: Method of analyzing effective polishing frequency and number of polishing times on polishing pads having different patterns and profiles
- Patent Title (中): 分析具有不同图案和轮廓的抛光垫的有效抛光频率和抛光次数的方法
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Application No.: US12056050Application Date: 2008-03-26
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Publication No.: US07991216B2Publication Date: 2011-08-02
- Inventor: Zone-ching Lin , Chein-chung Chen
- Applicant: Zone-ching Lin , Chein-chung Chen
- Applicant Address: TW Taipei
- Assignee: National Taiwan University of Science and Technology
- Current Assignee: National Taiwan University of Science and Technology
- Current Assignee Address: TW Taipei
- Agency: Kirton & McConkie
- Agent Evan R. Witt
- Priority: TW96121754A 20070615
- Main IPC: G06K9/00
- IPC: G06K9/00

Abstract:
A method for analyzing the effectiveness of polishing frequency and the number of polishing times on the polishing pads having different patterns and profiles while performing the chemical-mechanical polishing process on the wafers is described. This method is to convert the images of various patterns and topography of the chips and grinding pads into binary images, and then calculates the binary images by numerical matrix method, which only needs to calculate the modified model of the position changed and the frequency of grinding during the rotation and deformation of different patterns and topography during relative movement, and then uses overlay model of effective grinding frequency to predict the distribution of effective grinding frequency at a fixed period of grinding time under a set grinding path. Further proposes the overlay model of the grinding frequency of “Least Pixel Number (LPN)”, “Cross-section Check CSC”, “Straight Line-Path Effective polishing Factor (SLEF)” and “Scale Factor (SF),” so as to develop the procedures of analyzing the distribution condition of effective grinding frequency on the surface of the chips. It is referential to design better patterns and topography of grinding pads as well as setting the assembly parameters for CMP machines in the future.
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