Invention Grant
- Patent Title: Semiconductor memory device and semiconductor device
- Patent Title (中): 半导体存储器件和半导体器件
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Application No.: US12136340Application Date: 2008-06-10
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Publication No.: US07991945B2Publication Date: 2011-08-02
- Inventor: Shunichi Iwanari , Hisakazu Kotani , Masanori Matsuura
- Applicant: Shunichi Iwanari , Hisakazu Kotani , Masanori Matsuura
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-155007 20070612
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G06F13/28 ; G11C7/00

Abstract:
A semiconductor memory device, including: a cell array block including a plurality of memory cells arranged therein; and a controller, wherein the controller controls the semiconductor memory device so that: an operation of reading out data from a second region in the cell array block is initiated before completion of an operation of outputting data read out from a first region in the cell array block; and the data read out from the second region is output successively after the completion of the operation of outputting data read out from the first region.
Public/Granted literature
- US20080313391A1 SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2008-12-18
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