Invention Grant
US07992076B2 Method and device of rewriting a primary sector of a sector erasable semiconductor memory means
失效
重写扇区可擦除半导体存储器装置的主要扇区的方法和装置
- Patent Title: Method and device of rewriting a primary sector of a sector erasable semiconductor memory means
- Patent Title (中): 重写扇区可擦除半导体存储器装置的主要扇区的方法和装置
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Application No.: US11885777Application Date: 2006-01-23
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Publication No.: US07992076B2Publication Date: 2011-08-02
- Inventor: Jayaraman Raja
- Applicant: Jayaraman Raja
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Kenyon & Kenyon LLP
- Priority: EP05101783 20050308
- International Application: PCT/EP2006/050364 WO 20060123
- International Announcement: WO2006/094855 WO 20060914
- Main IPC: G06F11/08
- IPC: G06F11/08
Abstract:
In a method of rewriting a primary sector of a sector erasable semiconductor memory device, a bootloader code is copied from the primary sector to a second sector, all content of the first sector is subsequently erased, and the bootloader code is recopied from the second to the primary sector. Subsequently, an application code is written to a remaining unused part of the primary sector.
Public/Granted literature
- US20090049368A1 Method and Device of Rewriting a Primary Sector of a Sector Erasable Semiconductor Memory Means Public/Granted day:2009-02-19
Information query
