Invention Grant
US07992518B2 Silicon carbide gas distribution plate and RF electrode for plasma etch chamber
有权
用于等离子体蚀刻室的碳化硅气体分配板和RF电极
- Patent Title: Silicon carbide gas distribution plate and RF electrode for plasma etch chamber
- Patent Title (中): 用于等离子体蚀刻室的碳化硅气体分配板和RF电极
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Application No.: US11689318Application Date: 2007-03-21
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Publication No.: US07992518B2Publication Date: 2011-08-09
- Inventor: Robert Wu , Tuqiang Ni
- Applicant: Robert Wu , Tuqiang Ni
- Applicant Address: KY Georgetown, Grand Cayman
- Assignee: Advanced Micro-Fabrication Equipment, Inc. Asia
- Current Assignee: Advanced Micro-Fabrication Equipment, Inc. Asia
- Current Assignee Address: KY Georgetown, Grand Cayman
- Agency: Nixon Peabody LLP
- Agent Joseph Bach, Esq.
- Priority: CN200710037701 20070227
- Main IPC: C23C16/50
- IPC: C23C16/50 ; C23F1/00 ; H01L21/306
Abstract:
A showerhead for use in a capacitively-coupled plasma chamber and made of low resistivity bulk layer coated with CVD SiC. The bulk low resitivity material may be, for example, graphite, Silicon Carbide (SiC), converted graphite, SiC+C, etc. Sintered SiC may be used as the bulk material coated with CVD SiC to provide a showerhead that is suitable for use in a capacitively-coupled plasma chamber.
Public/Granted literature
- US20080202688A1 Silicon Carbide Gas Distribution Plate and RF Electrode for Plasma Etch Chamber Public/Granted day:2008-08-28
Information query
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