Invention Grant
- Patent Title: Method of manufacturing epitaxial silicon wafer
- Patent Title (中): 外延硅晶片的制造方法
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Application No.: US11731268Application Date: 2007-03-30
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Publication No.: US07993452B2Publication Date: 2011-08-09
- Inventor: Koichiro Hayashida , Kazuhiro Narahara , Hirotaka Kato
- Applicant: Koichiro Hayashida , Kazuhiro Narahara , Hirotaka Kato
- Applicant Address: JP Kanagawa
- Assignee: Sumco Techxiv Corporation
- Current Assignee: Sumco Techxiv Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Alston & Bird LLP
- Priority: JP2006-100921 20060331
- Main IPC: C30B21/04
- IPC: C30B21/04

Abstract:
A role of a bottom face of a silicon wafer is identified in a manufacturing process of the silicon wafer. And preferable characteristic feature is also identified. In order to obtain the above characteristic feature, a process method to be implemented into the method of manufacturing a normal silicon wafer is provided. For example, the method comprises: a pre-cleaning process for cleaning the silicon wafer having top and bottom faces processed to a mirror finish; and a rapid thermal process or an epitaxial growth process, wherein the pre-cleaning process comprises a hydrofluoric acid (HF) process and a subsequent pure water (DIW) process.
Public/Granted literature
- US20070228524A1 Method of manufacturing epitaxial silicon wafer Public/Granted day:2007-10-04
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