Invention Grant
- Patent Title: Method for manufacturing triarylpyrazine derivative
- Patent Title (中): 三芳基吡嗪衍生物的制备方法
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Application No.: US12354403Application Date: 2009-01-15
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Publication No.: US07993494B2Publication Date: 2011-08-09
- Inventor: Hideko Inoue , Hiroko Nomura
- Applicant: Hideko Inoue , Hiroko Nomura
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2008-012468 20080123
- Main IPC: B01J19/12
- IPC: B01J19/12 ; C07C209/68 ; C07D213/61 ; C09K11/06

Abstract:
A novel synthesis method of a triarylpyrazine derivative, in particular, a manufacturing method by which a triarylpyrazine derivative, in specific, a 2,3,5-triarylpyrazine derivative in which an aryl group at a 5-position includes a substituent having an electron-withdrawing property can be synthesized with high yield as compared to a conventional method is provided. By using a synthesis method in which a mixture including a 1-aryl-2-(methylsulfinyl)ethanone derivative, meso-1,2-diarylethylenediamine, and a dehydrogenation agent is irradiated with a microwave to be reacted, the above object is achieved.
Public/Granted literature
- US20090183982A1 Method for Manufacturing Triarylpyrazine Derivative Public/Granted day:2009-07-23
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