Invention Grant
US07993539B2 Methods of etching nanodots, methods of removing nanodots from substrates, methods of fabricating integrated circuit devices, methods of etching a layer comprising a late transition metal, and methods of removing a layer comprising a late transition metal from a substrate
有权
蚀刻纳米点的方法，从衬底去除纳米点的方法，制造集成电路器件的方法，蚀刻包含后过渡金属的层的方法以及从衬底去除包含后过渡金属的层的方法
- Patent Title: Methods of etching nanodots, methods of removing nanodots from substrates, methods of fabricating integrated circuit devices, methods of etching a layer comprising a late transition metal, and methods of removing a layer comprising a late transition metal from a substrate
- Patent Title (中): 蚀刻纳米点的方法，从衬底去除纳米点的方法，制造集成电路器件的方法，蚀刻包含后过渡金属的层的方法以及从衬底去除包含后过渡金属的层的方法
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Application No.: US12914814Application Date: 2010-10-28
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Publication No.: US07993539B2Publication Date: 2011-08-09
- Inventor: Eugene P. Marsh
- Applicant: Eugene P. Marsh
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00
Abstract:
Embodiments of the invention include methods of etching nanodots, to methods of removing nanodots from substrates, and to methods of fabricating integrated circuit devices. In one embodiment, a method of etching nanodots that include a late transition metal includes exposing such nanodots to a gas comprising a phosphorus and halogen-containing compound and an oxidizing agent. After the exposing, the nanodots which are remaining and were exposed are etched (either partially or completely) with an aqueous solution comprising HF.
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