It is intended to provide a semiconductor ceramic composition in which a part of Ba in BaTiO3 is substituted with Bi—Na, which is capable of restraining the evaporation of Bi in the calcination step, is capable of restraining the compositional deviation of Bi—Na thereby suppressing the formation of different phases, is capable of further reducing the resistivity at room temperature, and is capable of restraining the fluctuation of the Curie temperature; and to provide a production process of the same. When a calcined Ba(TiM)O3 powder (M is a semiconductor dopant) and a calcined (BiNa)TiO3 powder are separately prepared and the Ba(TiM)O3 powder is calcined at a relatively high temperature while the (BiNa)TiO3 powder is at a relatively low temperature, both at the most suitable temperatures for them, then the evaporation of Bi may be retarded and the compositional deviation of Bi—Na may be thereby suppressed to inhibit the formation of different phases; and when these calcined powders are mixed, formed and sintered, then a semiconductor ceramic composition which has a low resistivity at room temperature and is capable of restraining the fluctuation of the Curie temperature can be obtained.