Line ends forming

Invention Grant

Title translation: 线端成型

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Patent Title: Line ends forming
Patent Title (中): 线端成型
Application No.: US11853353

Application Date: 2007-09-11
Publication No.: US07993815B2

Publication Date: 2011-08-09
Inventor: Matthew E. Colburn , Allen H. Gabor , Scott D. Halle , Donald J. Samuels
Applicant: Matthew E. Colburn , Allen H. Gabor , Scott D. Halle , Donald J. Samuels
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Hoffman Warnick LLC
Agent Steven Capella
Main IPC: H01L21/8229
IPC: H01L21/8229

Abstract:

Methods of forming line ends and a related memory cell including the line ends are disclosed. In one embodiment, the method includes forming a first device element and a second device element separated from the first device element by a space; and forming a first line extending from the first device element, the first line including a bulbous line end over the space and distanced from the first device element, and a second line extending from the second device element, the second line including a bulbous line end over the space and distanced from the second device element.

Abstract(Chinese):

公开了形成线端的方法和包括线端的相关存储单元。在一个实施例中，该方法包括通过空间形成与第一器件元件分离的第一器件元件和第二器件元件; 以及形成从所述第一装置元件延伸的第一线，所述第一线包括在所述空间上并与所述第一装置元件间隔开的球形线端，以及从所述第二装置元件延伸的第二线，所述第二线包括球根线端并且与第二设备元件分开。

Public/Granted literature

US20090068837A1 LINE ENDS FORMING Public/Granted day:2009-03-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8222	......双极工艺
H01L21/8229	.......存储器结构