Invention Grant
US07993816B2 Method for fabricating self-aligned nanostructure using self-assembly block copolymers, and structures fabricated therefrom
有权
使用自组装嵌段共聚物制造自对准纳米结构的方法，以及由其制造的结构
- Patent Title: Method for fabricating self-aligned nanostructure using self-assembly block copolymers, and structures fabricated therefrom
- Patent Title (中): 使用自组装嵌段共聚物制造自对准纳米结构的方法，以及由其制造的结构
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Application No.: US12049780Application Date: 2008-03-17
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Publication No.: US07993816B2Publication Date: 2011-08-09
- Inventor: Charles T. Black , Matthew E. Colburn , David L. Rath
- Applicant: Charles T. Black , Matthew E. Colburn , David L. Rath
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
In one embodiment, the present invention provides a method for patterning a surface that includes forming a block copolymer atop a heterogeneous reflectivity surface, wherein the block copolymer is segregated into first and second units; applying a radiation to the first units and second units, wherein the heterogeneous reflectivity surface produces an exposed portion of the first units and the second units; and applying a development cycle to selectively remove at least one of the exposed first and second units of the segregated copolymer film to provide a pattern.
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