Invention Grant
US07993817B2 Structure with self aligned resist layer on an insulating surface and method of making same
失效
在绝缘表面上具有自对准抗蚀剂层的结构及其制造方法
- Patent Title: Structure with self aligned resist layer on an insulating surface and method of making same
- Patent Title (中): 在绝缘表面上具有自对准抗蚀剂层的结构及其制造方法
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Application No.: US12356100Application Date: 2009-01-20
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Publication No.: US07993817B2Publication Date: 2011-08-09
- Inventor: Daniel C. Edelstein , Elbert E. Huang , Robert D. Miller
- Applicant: Daniel C. Edelstein , Elbert E. Huang , Robert D. Miller
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Katherine S. Brown
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
A structure is provided with a self-aligned resist layer on an insulator surface and non-lithographic method of fabricating the same. The non-lithographic method includes applying a resist on a structure comprising at least one of interconnects formed in an insulator material. The method further comprises exposing the resist to energy and developing the resist to expose surfaces of the interconnects. The method further comprises depositing metal cap material on the exposed surfaces of the interconnects.
Public/Granted literature
- US20100181677A1 STRUCTURE WITH SELF ALIGNED RESIST LAYER ON AN INSULATING SURFACE AND METHOD OF MAKING SAME Public/Granted day:2010-07-22
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