Invention Grant
- Patent Title: Method of detecting heavy metal in semiconductor substrate
- Patent Title (中): 半导体衬底中重金属的检测方法
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Application No.: US12422395Application Date: 2009-04-13
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Publication No.: US07993942B2Publication Date: 2011-08-09
- Inventor: Kazunari Kurita
- Applicant: Kazunari Kurita
- Applicant Address: JP Tokyo
- Assignee: Sumco Corporation
- Current Assignee: Sumco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2008-105782 20080415
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G01R31/26
Abstract:
A method of detecting heavy metal in a semiconductor substrate, includes: a gate oxide film forming step of forming an organic oxide film by spin coating or a sol-gel process, and forming a metal/oxide film/semiconductor junction element by using a mercury probe method; and a step of detecting and quantifying heavy metal by calculating the surface concentration of the heavy metal from junction capacitance characteristics of the element.
Public/Granted literature
- US20090258447A1 METHOD OF DETECTING HEAVY METAL IN SEMICONDUCTOR SUBSTRATE Public/Granted day:2009-10-15
Information query
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