Invention Grant
- Patent Title: Thin film transistor panel and manufacturing method thereof
- Patent Title (中): 薄膜晶体管面板及其制造方法
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Application No.: US12758408Application Date: 2010-04-12
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Publication No.: US07993946B2Publication Date: 2011-08-09
- Inventor: Bong-Ju Kim , Chun-Gi You
- Applicant: Bong-Ju Kim , Chun-Gi You
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2006-0097401 20061002
- Main IPC: H01L21/28
- IPC: H01L21/28

Abstract:
A thin film transistor array panel including a substrate, a gate line and a gate-layer signal transmitting line of a gate driving circuit portion formed on the substrate, a gate insulating layer formed on the gate line and the gate-layer signal transmitting line and having a first contact hole exposing a portion of the gate-layer signal transmitting line, a semiconductor layer formed on the gate insulating layer, a data line including a source electrode, and a drain electrode formed on the gate insulating layer and the semiconductor layer, a data-layer signal transmitting line of the gate driving circuit portion formed on the gate insulating layer and connected to the gate-layer signal transmitting line through the first contact hole, a pixel electrode connected to the drain electrode, and a passivation layer formed on the data line, the drain electrode, and the data-layer signal transmitting line of the driving circuit portion. The data line, the drain electrode, and the data-layer signal transmitting line have a triple-layered structure including a lower layer, an intermediate layer, and an upper layer. The lower layer is made of a same layer as the pixel electrode.
Public/Granted literature
- US20100197058A1 THIN FILM TRANSISTOR PANEL AND MANUFACTURING METHOD THEREOF Public/Granted day:2010-08-05
Information query
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