Invention Grant
- Patent Title: Heterogeneous substrate including a sacrificial layer, and a method of fabricating it
- Patent Title (中): 包括牺牲层的非均相基板及其制造方法
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Application No.: US12488854Application Date: 2009-06-22
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Publication No.: US07993949B2Publication Date: 2011-08-09
- Inventor: François Perruchot , Bernard Diem , Vincent Larrey , Laurent Clavelier , Emmanuel Defay
- Applicant: François Perruchot , Bernard Diem , Vincent Larrey , Laurent Clavelier , Emmanuel Defay
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Alston & Bird LLP
- Priority: FR08/03496 20080623
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
The invention relates to a method of making a component from a heterogeneous substrate comprising first and second portions in at least one monocrystalline material, and a sacrificial layer constituted by at least one stack of at least one layer of monocrystalline Si situated between two layers of monocrystalline SiGe, the stack being disposed between said first and second portions of monocrystalline material, wherein the method consists in etching said stack by making: e) at least one opening in the first and/or second portion and the first and/or second layer of SiGe so as to reach the layer of Si; and f) eliminating all or part of the layer of Si.
Public/Granted literature
- US20090325335A1 HETEROGENEOUS SUBSTRATE INCLUDING A SACRIFICIAL LAYER, AND A METHOD OF FABRICATING IT Public/Granted day:2009-12-31
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