Invention Grant
- Patent Title: Charge transfer device
- Patent Title (中): 电荷转移装置
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Application No.: US12772666Application Date: 2010-05-03
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Publication No.: US07993952B2Publication Date: 2011-08-09
- Inventor: Eiji Matsuyama
- Applicant: Eiji Matsuyama
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2007-091330 20070330
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/261 ; H01L21/339
Abstract:
A charge transfer device 1 has an P-type region, an N-type well provided to the surficial portion of the P-type region, and transfer electrodes having P-type conductivity, provided over the N-type substrate while placing an insulating film in between.
Public/Granted literature
- US20100210044A1 CHARGE TRANSFER DEVICE Public/Granted day:2010-08-19
Information query
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