Invention Grant
- Patent Title: Poly diode structure for photo diode
- Patent Title (中): 光二极管的聚二极管结构
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Application No.: US11618685Application Date: 2006-12-29
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Publication No.: US07993956B2Publication Date: 2011-08-09
- Inventor: Yu-Da Shiu , Chyh-Yih Chang , Ming-Dou Ker , Che-Hao Chuang
- Applicant: Yu-Da Shiu , Chyh-Yih Chang , Ming-Dou Ker , Che-Hao Chuang
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.
Public/Granted literature
- US20070138589A1 NOVEL POLY DIODE STRUCTURE FOR PHOTO DIODE Public/Granted day:2007-06-21
Information query
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