Invention Grant
US07993963B2 Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device 有权
相变层及其制造方法以及包括相变层的相变存储器件以及制造和操作相变存储器件的方法

Phase change layer and method of manufacturing the same and phase change memory device comprising phase change layer and methods of manufacturing and operating phase change memory device
Abstract:
Provided are a phase change layer and a method of forming the phase change layer and a phase change memory device including the phase change layer, and methods of manufacturing and operating the phase change memory device. The phase change layer may be formed of a quaternary compound including an amount of indium (In) ranging from about 15 at. % to about 20 at. %. The phase change layer may be InaGebSbcTed, wherein an amount of germanium (Ge) ranges from about 10 at. %≦b≦about 15 at. %, an amount of antimony (Sb) ranges from about 20 at. %≦c≦about 25 at. %, and an amount of tellurium (Te) ranges from about 40 at. %≦d≦about 55 at. %.
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