Invention Grant
US07994025B2 Wafer processing method without occurrence of damage to device area
有权
晶圆加工方法不会对设备面积造成损害
- Patent Title: Wafer processing method without occurrence of damage to device area
- Patent Title (中): 晶圆加工方法不会对设备面积造成损害
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Application No.: US12902311Application Date: 2010-10-12
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Publication No.: US07994025B2Publication Date: 2011-08-09
- Inventor: Kazuma Sekiya
- Applicant: Kazuma Sekiya
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer, Burns & Crain, Ltd.
- Priority: JP2009-247530 20091028
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A wafer processing method of processing a wafer having on a front surface a device area where a plurality of devices are formed by being sectioned by predetermined dividing lines, and an outer circumferential redundant area surrounding the device area, includes the steps of: sticking a protection tape to the front surface of the wafer; holding a protection tape side of the wafer by a rotatable chuck table, positioning a cutting blade on a rear surface of the wafer, and rotating the chuck table to cut a boundary portion between the device area and the outer circumferential redundant area to form a separation groove; grinding only the rear surface of the wafer corresponding to the device area to form a circular recessed portion to leave the ring-like outer circumferential redundant area as a ring-like reinforcing portion, the wafer being such that the device area and the ring-like outer circumferential redundant area are united by the protection tape; and conveying the wafer supported by the ring-like reinforcing portion via the protection tape.
Public/Granted literature
- US20110097852A1 WAFER PROCESSING METHOD WITHOUT OCCURRENCE OF DAMAGE TO DEVICE AREA Public/Granted day:2011-04-28
Information query
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