Invention Grant
US07994026B2 Plasma dicing apparatus and method of manufacturing semiconductor chips
有权
等离子切割装置及半导体芯片的制造方法
- Patent Title: Plasma dicing apparatus and method of manufacturing semiconductor chips
- Patent Title (中): 等离子切割装置及半导体芯片的制造方法
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Application No.: US12523191Application Date: 2008-11-12
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Publication No.: US07994026B2Publication Date: 2011-08-09
- Inventor: Atsushi Harikai , Kiyoshi Arita , Tetsuhiro Iwai
- Applicant: Atsushi Harikai , Kiyoshi Arita , Tetsuhiro Iwai
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Wenderoth, Lind & Ponack, L.L.P.
- Priority: JP2007-297567 20071116; JP2007-297568 20071116
- International Application: PCT/JP2008/003271 WO 20081112
- International Announcement: WO2009/063620 WO 20090522
- Main IPC: H01L21/301
- IPC: H01L21/301

Abstract:
A plasma dicing apparatus in which a semiconductor wafer with a protective sheet stuck thereonto covering the entire circuit-forming surface and with an etching-resistant mask member stuck on the back surface opposite to the circuit-forming surface is mounted on a mounting stage; plasma etching is performed using the mask member as a mask; and the semiconductor wafer is diced into plural semiconductor chips. The plasma dicing apparatus includes a ring-shaped frame member retaining the outer circumference of the mask member extending off the outer circumference of the semiconductor wafer. The mounting stage is composed of a wafer supporting part supporting a semiconductor wafer and a frame member supporting part supporting the frame member. This facilitates carrying a semiconductor wafer into and out of the vacuum chamber.
Public/Granted literature
- US20100048001A1 PLASMA DICING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR CHIPS Public/Granted day:2010-02-25
Information query
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