Invention Grant
US07994029B2 Method for patterning crystalline indium tin oxide using femtosecond laser
有权
使用飞秒激光图案化结晶铟锡氧化物的方法
- Patent Title: Method for patterning crystalline indium tin oxide using femtosecond laser
- Patent Title (中): 使用飞秒激光图案化结晶铟锡氧化物的方法
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Application No.: US12358046Application Date: 2009-01-22
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Publication No.: US07994029B2Publication Date: 2011-08-09
- Inventor: Chung-Wei Cheng , Costas P. Grigoropoulos , David Jen Hwang , Moosung Kim
- Applicant: Chung-Wei Cheng , Costas P. Grigoropoulos , David Jen Hwang , Moosung Kim
- Applicant Address: TW Hsin-Chu US CA Oakland
- Assignee: Industrial Technology Research Institute,The Regents of the University of California
- Current Assignee: Industrial Technology Research Institute,The Regents of the University of California
- Current Assignee Address: TW Hsin-Chu US CA Oakland
- Agency: WPAT, PC
- Agent Justin King
- Priority: TW97107130A 20080229
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L21/44
Abstract:
A method for patterning crystalline indium tin oxide (ITO) using femtosecond laser is disclosed, which comprises steps of: (a) providing a substrate with an amorphous ITO layer thereon; (b) transferring the amorphous ITO layer in a predetermined area into a crystalline ITO layer by emitting a femtosecond laser beam to the amorphous ITO layer in the predetermined area; and (c) removing the amorphous ITO layer on the substrate using an etching solution.
Public/Granted literature
- US20090221141A1 METHOD FOR PATTERNING CRYSTALLINE INDIUM TIN OXIDE USING FEMTOSECOND LASER Public/Granted day:2009-09-03
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