Method for forming a dielectric layer with an air gap, and a structure including the dielectric layer with the air gap

Invention Grant

US07994046B2 Method for forming a dielectric layer with an air gap, and a structure including the dielectric layer with the air gap 有权

Title translation: 用于形成具有气隙的电介质层的方法，以及包括具有气隙的电介质层的结构

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Patent Title: Method for forming a dielectric layer with an air gap, and a structure including the dielectric layer with the air gap
Patent Title (中): 用于形成具有气隙的电介质层的方法，以及包括具有气隙的电介质层的结构
Application No.: US11342099

Application Date: 2006-01-27
Publication No.: US07994046B2

Publication Date: 2011-08-09
Inventor: Shin-Puu Jeng
Applicant: Shin-Puu Jeng
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Duane Morris LLP
Main IPC: H01L21/4763
IPC: H01L21/4763

Method for forming a dielectric layer with an air gap, and a structure including the dielectric layer with the air gap

Abstract:

A method of forming a semiconductor structure includes providing a first dielectric layer with an opening above a substrate. An exposed surface portion of the first dielectric layer in the opening is transformed. A protective dielectric layer is formed along the transformed portion of the first dielectric layer. The opening is filled with a conductive material. The transformed portion of the first dielectric layer is removed to form an air gap between the protective dielectric layer and a remaining portion of the first dielectric layer.

Abstract(Chinese):

形成半导体结构的方法包括提供在衬底上方具有开口的第一介电层。开口中的第一介电层的暴露表面部分被转变。沿着第一电介质层的变形部分形成保护电介质层。开口填充有导电材料。去除第一电介质层的变形部分以在保护电介质层和第一电介质层的剩余部分之间形成气隙。

Public/Granted literature

US20070178713A1 Method for forming a dielectric layer with an air gap, and a structure including the dielectric layer with the air gap Public/Granted day:2007-08-02

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）