Invention Grant
- Patent Title: Semiconductor device having oxidized metal film and manufacture method of the same
- Patent Title (中): 具有氧化金属膜的半导体器件及其制造方法
-
Application No.: US11896271Application Date: 2007-08-30
-
Publication No.: US07994054B2Publication Date: 2011-08-09
- Inventor: Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma
- Applicant: Atsuko Sakata , Junichi Wada , Seiichi Omoto , Masaaki Hatano , Soichi Yamashita , Kazuyuki Higashi , Naofumi Nakamura , Masaki Yamada , Kazuya Kinoshita , Tomio Katata , Masahiko Hasunuma
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2005-014453 20050121
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a first metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, oxidizing at least part of the first metal film with oxidizing species remaining in the insulating film, and forming a second metal film, which includes any of a high melting point metal and a noble metal, on the first metal film, the first metal film and the second metal film sharing different metallic material.
Public/Granted literature
- US20080090410A1 Semiconductor device having oxidized metal film and manufacture method of the same Public/Granted day:2008-04-17
Information query
IPC分类:
