A method of manufacturing a semiconductor apparatus which includes the steps of forming a via hole and a wire trench reaching an underlying wire in an interlayer insulation film formed on the underlying wire, forming an diffusion barrier film on said underlying wire exposed through said via hole, on an inner wall of said via hole and on an inner wall of said wire trench, forming a seed layer on said underlying wire and on said diffusion barrier film formed on the inner wall of said via hole and the inner wall of said wire trench while concurrently said diffusion barrier film deposited on the bottom of said via hole is being etched, and forming metal wire in said via hole and in said wire trench.