Invention Grant
- Patent Title: Si surface cleaning for semiconductor circuits
- Patent Title (中): Si表面清洗半导体电路
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Application No.: US11871987Application Date: 2007-10-13
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Publication No.: US07994066B1Publication Date: 2011-08-09
- Inventor: Giovanni Capellini , Gianlorenzo Masini , Lawrence C. Gunn, III , Jeremy Witzens , Joseph W. White
- Applicant: Giovanni Capellini , Gianlorenzo Masini , Lawrence C. Gunn, III , Jeremy Witzens , Joseph W. White
- Applicant Address: US CA Carlsbad
- Assignee: Luxtera, Inc.
- Current Assignee: Luxtera, Inc.
- Current Assignee Address: US CA Carlsbad
- Agent George Sai-Halasz
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method is disclosed for the cleaning of a Si surface at low temperatures. Oxide on the Si surface is brought into contact with Ge, which then sublimates off the surface. The Ge contamination remaining after the oxide removal is cleared away by an exposure to an alkali halide. The disclosed cleaning method may by used in semiconductor circuit fabrication for preparing surfaces ahead of epitaxial growth.
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