Invention Grant
- Patent Title: Material with a hierarchical porosity comprising silicon
- Patent Title (中): 具有分层孔隙率的材料包含硅
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Application No.: US11165570Application Date: 2005-06-24
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Publication No.: US07994085B2Publication Date: 2011-08-09
- Inventor: Alexandra Chaumonnot , Aurélie Coupe , Clément Sanchez , Patrick Euzen , Cédric Boissiere , David Grosso
- Applicant: Alexandra Chaumonnot , Aurélie Coupe , Clément Sanchez , Patrick Euzen , Cédric Boissiere , David Grosso
- Applicant Address: FR Rueil Malmaison Cedex
- Assignee: IFP Energies Nouvelles
- Current Assignee: IFP Energies Nouvelles
- Current Assignee Address: FR Rueil Malmaison Cedex
- Agency: Millen, White, Zelano & Branigan, P.C.
- Priority: FR0406940 20040624
- Main IPC: B01J29/06
- IPC: B01J29/06
Abstract:
A material with a hierarchical porosity is described, constituted by at least two spherical elementary particles, each of said spherical particles comprising zeolitic nanocrystals having a pore size in the range 0.2 to 2 nm and a matrix based on silicon oxide, which is mesostructured, having a pore size in the range 1.5 to 30 nm and having amorphous walls with a thickness in the range 1 to 20 nm, said spherical elementary particles having a maximum diameter of 10 μm. the matrix based on silicon oxide may contain aluminium. The preparation of said material is also described.
Public/Granted literature
- US20060030477A1 Material with a hierarchical porosity comprising silicon Public/Granted day:2006-02-09
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