Invention Grant
US07994108B2 Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
有权
用于去除蚀刻后光致抗蚀剂和底部防反射涂层的组合物
- Patent Title: Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
- Patent Title (中): 用于去除蚀刻后光致抗蚀剂和底部防反射涂层的组合物
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Application No.: US11813497Application Date: 2006-01-09
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Publication No.: US07994108B2Publication Date: 2011-08-09
- Inventor: David W. Minsek , Weihua Wang , David D. Bernhard , Thomas H. Baum , Melissa K. Rath
- Applicant: David W. Minsek , Weihua Wang , David D. Bernhard , Thomas H. Baum , Melissa K. Rath
- Applicant Address: US CT Danbury
- Assignee: Advanced Technology Materials, Inc.
- Current Assignee: Advanced Technology Materials, Inc.
- Current Assignee Address: US CT Danbury
- Agency: Moore & Van Allen, PLLC
- Agent Tristan A. Fuierer; Rosa Yaghmour
- International Application: PCT/US2006/000366 WO 20060109
- International Announcement: WO2006/074316 WO 20060713
- Main IPC: G03F7/32
- IPC: G03F7/32

Abstract:
An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture.
Public/Granted literature
- US20090215659A1 COMPOSITION USEFUL FOR REMOVAL OF POST-ETCH PHOTORESIST AND BOTTOM ANTI-REFLECTION COATINGS Public/Granted day:2009-08-27
Information query
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