Invention Grant
US07994429B2 Manufacturing method and structure for a substrate with vertically embedded capacitor 有权
具有垂直嵌入式电容器的基板的制造方法和结构

  • Patent Title: Manufacturing method and structure for a substrate with vertically embedded capacitor
  • Patent Title (中): 具有垂直嵌入式电容器的基板的制造方法和结构
  • Application No.: US11755726
    Application Date: 2007-05-30
  • Publication No.: US07994429B2
    Publication Date: 2011-08-09
  • Inventor: Guo-Cheng Liao
  • Applicant: Guo-Cheng Liao
  • Applicant Address: TW Nantze Export Processing Zone, Kao-Hsiung
  • Assignee: Advanced Semiconductor Engineering, Inc.
  • Current Assignee: Advanced Semiconductor Engineering, Inc.
  • Current Assignee Address: TW Nantze Export Processing Zone, Kao-Hsiung
  • Agent Winston Hsu; Scott Margo
  • Priority: TW95132072A 20060830
  • Main IPC: H05K1/16
  • IPC: H05K1/16 H05K1/11
Manufacturing method and structure for a substrate with vertically embedded capacitor
Abstract:
A manufacturing method and structure for substrate with vertically embedded capacitors includes the steps of providing a plurality of conductive layers having a first dielectric layer and a leading wire layer formed on the first dielectric layer, providing a plurality of composite layers having a second dielectric layer and a patterned electrode layer formed on the second dielectric layer, laminating the conductive layers and the composite layers to form a block which defines a plurality of substrates with vertically embedded capacitors and a plurality of sawing streets between the substrates, and sawing the block along the sawing streets to singularize the substrates.
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