Invention Grant
US07994429B2 Manufacturing method and structure for a substrate with vertically embedded capacitor
有权
具有垂直嵌入式电容器的基板的制造方法和结构
- Patent Title: Manufacturing method and structure for a substrate with vertically embedded capacitor
- Patent Title (中): 具有垂直嵌入式电容器的基板的制造方法和结构
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Application No.: US11755726Application Date: 2007-05-30
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Publication No.: US07994429B2Publication Date: 2011-08-09
- Inventor: Guo-Cheng Liao
- Applicant: Guo-Cheng Liao
- Applicant Address: TW Nantze Export Processing Zone, Kao-Hsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Nantze Export Processing Zone, Kao-Hsiung
- Agent Winston Hsu; Scott Margo
- Priority: TW95132072A 20060830
- Main IPC: H05K1/16
- IPC: H05K1/16 ; H05K1/11

Abstract:
A manufacturing method and structure for substrate with vertically embedded capacitors includes the steps of providing a plurality of conductive layers having a first dielectric layer and a leading wire layer formed on the first dielectric layer, providing a plurality of composite layers having a second dielectric layer and a patterned electrode layer formed on the second dielectric layer, laminating the conductive layers and the composite layers to form a block which defines a plurality of substrates with vertically embedded capacitors and a plurality of sawing streets between the substrates, and sawing the block along the sawing streets to singularize the substrates.
Public/Granted literature
- US20080053690A1 MANUFACTURING METHOD AND STRUCTURE FOR A SUBSTRATE WITH VERTICALLY EMBEDDED CAPACITOR Public/Granted day:2008-03-06
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