Invention Grant
- Patent Title: Semiconductor device capable of switching operation modes
- Patent Title (中): 能够切换操作模式的半导体装置
-
Application No.: US12801651Application Date: 2010-06-18
-
Publication No.: US07994437B2Publication Date: 2011-08-09
- Inventor: Hiroyoshi Fukuda
- Applicant: Hiroyoshi Fukuda
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2008-089789 20080331
- Main IPC: H01L23/49
- IPC: H01L23/49 ; H05K5/06

Abstract:
A semiconductor device includes a substrate, a first internal terminal, a second internal terminal, a third internal terminal, and a fourth internal terminal which are placed along perimeter of the substrate, a circuit formed above the substrate and coupled to the first internal terminal, a first external terminal coupled to the second internal terminal, a second external terminal coupled to the third internal terminal, and a third external terminal coupled to the fourth internal terminal and placed beside one side of the substrate where the second external terminal is located, wherein the circuit generates a signal indicative of a connection state between the first internal terminal and the first external terminal, and wherein the first internal terminal and the second internal terminal are arranged to form two rows in a direction perpendicular to one side of the substrate beside which the first external terminal is placed.
Public/Granted literature
- US20100259320A1 Semiconductor device capable of switching operation modes Public/Granted day:2010-10-14
Information query
IPC分类: