Invention Grant
US07994466B2 Bolometer-type infrared imaging apparatus including a one or two dimensional sensor array semiconductor device
有权
包含一维或二维传感器阵列半导体器件的热辐射计型红外成像设备
- Patent Title: Bolometer-type infrared imaging apparatus including a one or two dimensional sensor array semiconductor device
- Patent Title (中): 包含一维或二维传感器阵列半导体器件的热辐射计型红外成像设备
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Application No.: US12649981Application Date: 2009-12-30
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Publication No.: US07994466B2Publication Date: 2011-08-09
- Inventor: Katsuya Kawano
- Applicant: Katsuya Kawano
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2006-194337 20060714
- Main IPC: H01J40/14
- IPC: H01J40/14 ; H01L27/00

Abstract:
Disclosed is a bolometer infrared imaging device including a plural number of readout circuits, each comprising a bias circuit that includes a bias transistor that supplies a constant voltage to a bolometer device, a bias cancellation circuit that includes a canceller transistor that removes offset current component of the bolometer device and an integrating operational amplifier that integrates the difference current between the current flowing in the bias transistor and that flowing in the canceller transistor. The bias circuit includes a source follower circuit that receives a first input voltage and supplies an output voltage to the gate of the bias transistor. The bias cancellation circuit includes a source follower circuit that receives a second input voltage and supplies an output voltage to the gate of the canceller transistor.
Public/Granted literature
- US20100102231A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-04-29
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