Invention Grant
- Patent Title: Organic thin film transistors
- Patent Title (中): 有机薄膜晶体管
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Application No.: US12014884Application Date: 2008-01-16
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Publication No.: US07994495B2Publication Date: 2011-08-09
- Inventor: Yiliang Wu , Beng S. Ong
- Applicant: Yiliang Wu , Beng S. Ong
- Applicant Address: US CT Norwalk
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: US CT Norwalk
- Agency: Fay Sharpe LLP
- Main IPC: H01L51/30
- IPC: H01L51/30
Abstract:
An organic thin film transistor has a gate dielectric layer which is formed from a block copolymer. The block copolymer comprises a polar block and a nonpolar block. The resulting dielectric layer has good adhesion to the gate electrode and good compatibility with the semiconducting layer.
Public/Granted literature
- US20090179194A1 ORGANIC THIN FILM TRANSISTORS Public/Granted day:2009-07-16
Information query
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