Invention Grant
- Patent Title: Semiconductor probe having wedge shape resistive tip and method of fabricating the same
- Patent Title (中): 具有楔形电阻尖端的半导体探针及其制造方法
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Application No.: US11750404Application Date: 2007-05-18
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Publication No.: US07994499B2Publication Date: 2011-08-09
- Inventor: Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park , Chul-min Park
- Applicant: Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park , Chul-min Park
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2006-0097412 20061002
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of a second impurity having an opposite polarity to the first impurity, and has first and second semiconductor electrode regions doped with a high concentration of the second impurity on both side slopes of the resistive tip. The probe also includes a cantilever having the resistive tip on an edge portion thereof, and an end portion of the resistive tip has a wedge shape.
Public/Granted literature
- US20080078239A1 SEMICONDUCTOR PROBE HAVING WEDGE SHAPE RESISTIVE TIP AND METHOD OF FABRICATING THE SAME Public/Granted day:2008-04-03
Information query
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