Invention Grant
- Patent Title: Semiconductor light emitting device having multiple single crystalline buffer layers
- Patent Title (中): 具有多个单晶缓冲层的半导体发光器件
-
Application No.: US12277170Application Date: 2008-11-24
-
Publication No.: US07994520B2Publication Date: 2011-08-09
- Inventor: Kyong Jun Kim
- Applicant: Kyong Jun Kim
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2007-0120650 20071126
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L33/12
Abstract:
Disclosed are a semiconductor light emitting device comprising a single crystalline buffer layer and a manufacturing method thereof. The semiconductor light emitting device comprises a single crystalline buffer layer, and a compound semiconductor structure comprising III and V group elements on the single crystalline buffer layer.
Public/Granted literature
- US20090140267A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2009-06-04
Information query
IPC分类:
