Invention Grant
- Patent Title: High light extraction efficiency light emitting diode (LED)
- Patent Title (中): 高光提取效率发光二极管（LED）
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Application No.: US11593268Application Date: 2006-11-06
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Publication No.: US07994527B2Publication Date: 2011-08-09
- Inventor: Steven P. DenBaars , Shuji Nakamura , Hisashi Masui , Natalie Nichole Fellows , Akihiko Murai
- Applicant: Steven P. DenBaars , Shuji Nakamura , Hisashi Masui , Natalie Nichole Fellows , Akihiko Murai
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.
Public/Granted literature
- US20070102721A1 High light extraction efficiency light emitting diode (LED) Public/Granted day:2007-05-10
Information query
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