Invention Grant
US07994558B2 Method for forming barrier metal layer of bit line in semiconductor memory device
失效
在半导体存储器件中形成位线的势垒金属层的方法
- Patent Title: Method for forming barrier metal layer of bit line in semiconductor memory device
- Patent Title (中): 在半导体存储器件中形成位线的势垒金属层的方法
-
Application No.: US11510709Application Date: 2006-08-28
-
Publication No.: US07994558B2Publication Date: 2011-08-09
- Inventor: Kwan-Yong Lim , Min-Gyu Sung , Heung-Jae Cho
- Applicant: Kwan-Yong Lim , Min-Gyu Sung , Heung-Jae Cho
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2005-0079535 20050829
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
A semiconductor memory device includes a titanium layer and a titanium nitride layer formed on a substrate, a thin layer formed on the titanium nitride layer, and a metal layer formed on the thin layer, wherein the thin layer increases a grain size of the metal layer.
Public/Granted literature
- US20070045854A1 Method and fabricating semiconductor memory device Public/Granted day:2007-03-01
Information query
IPC分类:
