Invention Grant
- Patent Title: Semiconductor device for preventing the leaning of storage nodes
- Patent Title (中): 用于防止存储节点倾斜的半导体装置
-
Application No.: US12169708Application Date: 2008-07-09
-
Publication No.: US07994561B2Publication Date: 2011-08-09
- Inventor: Hun Kim , Byung Soo Eun
- Applicant: Hun Kim , Byung Soo Eun
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2008-0039941 20080429
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/76 ; H01L29/94 ; H01L31/119
Abstract:
A semiconductor device for preventing the leaning of storage nodes and a method of manufacturing the same is described. The semiconductor device includes support patterns that are formed to support a plurality of cylinder type storage nodes. The support patterns are formed of a BN layer and have a hexagonal structure. The BN layer forming the support patterns has compressive stress as opposed to tensile stress and can therefore withstand cracking in the support patterns.
Public/Granted literature
- US20090267197A1 SEMICONDUCTOR DEVICE FOR PREVENTING THE LEANING OF STORAGE NODES AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2009-10-29
Information query
IPC分类:
