Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12423280Application Date: 2009-04-14
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Publication No.: US07994570B2Publication Date: 2011-08-09
- Inventor: Jun Tamura
- Applicant: Jun Tamura
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2008-105857 20080415
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
A semiconductor device in which current flows in a vertical direction includes a structure that decreases resistance between a source electrode and a drain electrode along with a current path at a position different from a position having highest electric field intensity between the source electrode and the drain electrode.
Public/Granted literature
- US20090256195A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-10-15
Information query
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