Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US12858942Application Date: 2010-08-18
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Publication No.: US07994589B2Publication Date: 2011-08-09
- Inventor: Makoto Tsutsue , Masaki Utsumi
- Applicant: Makoto Tsutsue , Masaki Utsumi
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2003-379754 20031110
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
A seal ring structure is formed through a multilayer structure of a plurality of dielectric films in a peripheral part of a chip region to surround the chip region. A dual damascene interconnect in which an interconnect and a plug connected to the interconnect are integrated is formed in at least one of the dielectric films in the chip region. Part of the seal ring structure formed in the dielectric film in which the dual damascene interconnect is formed is continuous. A protection film formed on the multilayer structure has an opening on the seal ring. A cap layer connected to the seal ring is formed in the opening.
Public/Granted literature
- US20100308464A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2010-12-09
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